About The

"Hall Of Fame" 

Concept


The "Hall of Fame" initiative is designed to recognize and honor outstanding contributions in the leading fields . By participating in this prestigious program, researchers and students have the unique opportunity to showcase their innovative work, elevate their research impact, and gain recognition among the academic and industrial leaders . This program encourages participants to deepen their understanding and expertise by engaging in high-quality research, review articles, or case studies related to their course areas.

Features
  • Publication Opportunity
  • Centre of Excellence Membership
  • Networking Prospects
  • Recognition
Benefits
  • Enhanced Research Skills
  • Increased Visibility
  • Career Advancement
  • Ongoing Learning
Methodology to Participate
  • Enrollment & Submission
  • Development
  • Peer Review
  • Publication and Recognition

Features

  • Publication Opportunity: Participants can get their work published in a prestigious Journal, valued upto USD 1,000, after a thorough peer-review process.
  • Centre of Excellence Membership: Exceptional contributors will have the chance to join an esteemed Centre of Excellence, where they can collaborate with industry leaders and pioneer further advancements in research areas.
  • Networking Prospects: Engage with leading professionals and academics in the field, expanding your professional network and opening doors to collaborative opportunities.
  • Recognition: Earn a place in the coveted Hall of Fame, which not only highlights your achievements but also enhances your professional standing in the scientific community.

Benefits

  • Enhanced Research Skills: Tackle complex problems and explore innovative solutions within technology, improving your research capabilities.
  • Increased Visibility: Having your work published and recognized boosts your visibility in the academic and industrial sectors.
  • Career Advancement: This recognition can significantly enhance your resume, helping you secure advanced positions and new career opportunities.
  • Ongoing Learning: Access to continuous learning resources and expert guidance to stay ahead in the rapidly evolving field of technology.

Methodology to Participate

  • Enrollment: Participants must be enrolled in the nanoschool program and select a research, review article, or case study topic related to their course.
  • Submission: Submit an abstract or proposal of your research to the program committee for initial review.
  • Development: Once approved, develop your full paper under the guidance of assigned mentors and peers.
  • Peer Review: Submit your completed paper for peer review. Revisions may be required based on feedback to ensure the highest quality of research.
  • Publication and Recognition: Successful papers will be published, and outstanding contributions will be recognized in the Hall of Fame.

How to Start

Begin by reviewing the curriculum and resources provided by the nanoschool to identify potential topics that align with your interests and the program’s goals. Prepare a concise abstract outlining your research question, methodology, and expected outcomes and submit it to the program committee to kickstart your participation.

FAQ's

Who can participate in the Hall of Fame program?

Anyone enrolled in the nanoschool with a focus on applied & core areas of technology can participate.

What types of research are considered for the Hall of Fame?

Innovative research, detailed review articles, and insightful case studies that contribute significantly to the field.

Is there a fee to participate or publish?

There is no fee for participating. The publication fee for the Journal is covered for papers that are accepted into the Hall of Fame.

How long does the review process take?

The review process typically takes 3-6 months, depending on the complexity and scope of the research.

What happens if my paper is not selected for publication?

Feedback will be provided for further improvement, and participants are encouraged to refine and resubmit their work.